Metal ion implantation of multiwalled boron nitride nanotubes
โ Scribed by E.A. Obraztsova; D.V. Shtansky; A.N. Sheveyko; M. Yamaguchi; A.M. Kovalskii; D. Golberg
- Book ID
- 115547223
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 499 KB
- Volume
- 67
- Category
- Article
- ISSN
- 1359-6462
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi