In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi
โฆ LIBER โฆ
Covalent Functionalization: Towards Soluble Multiwalled Boron Nitride Nanotubes
โ Scribed by Chunyi Zhi; Yoshio Bando; Chengchun Tang; Susumu Honda; Kazuhiko Sato; Hiroaki Kuwahara; Dmitri Golberg
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 181 KB
- Volume
- 117
- Category
- Article
- ISSN
- 0044-8249
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โฆ Synopsis
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex function of many structural parameters, which are difficult to control. [2] BNNTs exhibit excellent mechanical properties, high thermal conductivity, and superb resistance
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