Electronic structure of multiwall boron nitride nanotubes
โ Scribed by Fuentes, G. G.; Borowiak-Palen, Ewa; Pichler, T.; Liu, X.; Graff, A.; Behr, G.; Kalenczuk, R. J.; Knupfer, M.; Fink, J.
- Book ID
- 121672599
- Publisher
- The American Physical Society
- Year
- 2003
- Tongue
- English
- Weight
- 158 KB
- Volume
- 67
- Category
- Article
- ISSN
- 1098-0121
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๐ SIMILAR VOLUMES
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi