✦ LIBER ✦

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

✍ Scribed by Waltereit, Patrick; Poblenz, Christiane; Rajan, Siddharth; Wu, Feng; Mishra, Umesh K.; Speck, James S.

Book ID: 126507863
Publisher: Institute of Pure and Applied Physics
Year: 2004
Tongue: English
Weight: 154 KB
Volume: 43
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L1520

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural and morphological properties

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

✍ A. L. Corrion; C. Poblenz; F. Wu; J. S. Speck 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 847 KB

Properties of InN layers grown on 6HâS

Properties of InN layers grown on 6HâSiC(0001) by plasma-assisted molecular beam epitaxy

✍ Ive, Tommy; Brandt, Oliver; Ramsteiner, Manfred; Giehler, Manfred; Kostial, Helm 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 455 KB

Growth of Strain Free GaN Layers on 6H-S

Growth of Strain Free GaN Layers on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy

✍ K. Jeganathan; M. Shimizu; H. Okumura 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB

Growth and Characterisation of High Elec

Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy

✍ Webb, J. ;Tang, Haipeng ;Bardwell, J.A. ;Rolfe, S. ;Liu, Ying ;Lapointe, J. ;Mar 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB 👁 2 views

Influence of double buffer layers on pro

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

✍ C.F. Zhu; J.Q. Xie; W.K. Fong; C. Surya 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 104 KB

High mobility two-dimensional electron g

High mobility two-dimensional electron gas in AlGaNâGaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

✍ Skierbiszewski, C.; Dybko, K.; Knap, W.; Siekacz, M.; KrupczynÌski, W.; Nowak, 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 327 KB