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Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

✍ Scribed by J. Bai; M. Dudley; L. Chen; B. J. Skromme; B. Wagner; R. F. Davis; U. Chowdhury; R. D. Dupuis


Book ID
121664534
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
277 KB
Volume
97
Category
Article
ISSN
0021-8979

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Structural defects in homoepitaxial diam
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## Abstract In the present study homoepitaxial diamond films have been grown by microwave plasma chemical vapour deposition (MWPCVD) on (001)‐oriented Ib HPHT substrates with off‐axis angles of up to 11Β°. Freestanding films of several hundred microns thickness were produced by removal of the Ib sub