𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

✍ Scribed by Suski, T.; Staszczak, G.; Grzanka, S.; Czernecki, R.; Litwin-Staszewska, E.; Piotrzkowski, R.; Dmowski, L. H.; Khachapuridze, A.; Kryśko, M.; Perlin, P.; Grzegory, I.

Book ID
120068997
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
542 KB
Volume
108
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Indium incorporation in InGaN/GaN quantu
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
✍ Lai, K. Y. ;Paskova, T. ;Wheeler, V. D. ;Chung, T. Y. ;Grenko, J. A. ;Johnson, M 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 372 KB

## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla

Photoluminescence of Mg-doped m-plane Ga
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
✍ Monemar, Bo ;Paskov, Plamen ;Pozina, Galia ;Hemmingsson, Carl ;Bergman, Peder ;L 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 355 KB

## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^−3^ to above 10^20^ cm^−3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito