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Structural defect-related emissions in nonpolar a-plane GaN

✍ Scribed by P.P. Paskov; R. Schifano; T. Paskova; T. Malinauskas; J.P. Bergman; B. Monemar; S. Figge; D. Hommel


Book ID
108239048
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
154 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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## Abstract Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra