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Effect of defects on strain state in nonpolar a-plane GaN

✍ Scribed by Z.Y. Liu; S.R. Xu; J.C. Zhang; J.S. Xue; X.Y. Xue; M.T. Niu; Y. Hao


Book ID
116630197
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
712 KB
Volume
343
Category
Article
ISSN
0022-0248

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## Abstract Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra