Surface striation, anisotropic in-plane strain, and degree of polarization in nonpolar m -plane GaN grown on SiC
β Scribed by Feng, Shih-Wei; Yang, Chih-Kai; Lai, Chih-Ming; Tu, Li-Wei; Sun, Qian; Han, Jung
- Book ID
- 121420342
- Publisher
- Institute of Physics
- Year
- 2011
- Tongue
- English
- Weight
- 879 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0022-3727
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π SIMILAR VOLUMES
## Abstract Structural state of nonpolar aβplane GaN layers grown by MOVPE on rβplane sapphire is investigated by Xβray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra
Hexagonal a-plane GaN films with Γ°1 1 2 0Γ-orientation were grown by metalorganic vapour phase epitaxy on r-plane sapphire substrates. Spectroscopic ellipsometry in the photon energy range from 1.2 up to 5 eV was applied in order to determine the ordinary and extraordinary complex dielectric functio