𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structural characterization of nonpolar (112¯0) a-plane GaN thin films grown on (11¯02) r-plane sapphire

✍ Scribed by Craven, M. D.; Lim, S. H.; Wu, F.; Speck, J. S.; DenBaars, S. P.

Book ID
118023737
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
498 KB
Volume
81
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray diffraction study of strain and de
X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire
✍ Kyutt, R. N. ;Shcheglov, M. P. ;Ratnikov, V. V. ;Kalmykov, A. E. 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 1022 KB

## Abstract Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra

Optimal activation condition of nonpolar
Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD
✍ Ji-Su Son; Kwang Hyeon Baik; Yong Gon Seo; Hooyoung Song; Ji Hoon Kim; Sung-Min 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 874 KB

The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58 Â 10 19 cm