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Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire

✍ Scribed by Benjamin Leung; Qian Sun; Christopher Yerino; Yu Zhang; Jung Han; Bo Hyun Kong; Hyung Koun Cho; Kuan-Yung Liao; Yun-Li Li

Book ID
116630164
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
865 KB
Volume
341
Category
Article
ISSN
0022-0248

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Structural characterization of thick (11
Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire
✍ Usikov, Alexander ;Soukhoveev, Vitali ;Shapovalov, Lisa ;Syrkin, Alexander ;Ivan 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 466 KB

## Abstract This paper reports structural characterization of thick $(11\bar {2}2)$‐oriented GaN layers by means of XRD, TEM, and micro‐ CL. The semi‐polar $(11\bar {2}2)$ GaN layers were grown on __m__‐plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading d