Structure and property of Ge/Si nanomult
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Shihua Huang; Zhou Xia; Hong Xiao; Jufang Zheng; Yunlong Xie; Guanqun Xie
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Article
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2009
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Elsevier Science
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English
β 316 KB
Ge/Si nanomultilayers were prepared using magnetron sputtering deposition and adjusting the growth conditions, such as the substrate temperature, sputtering pressure, sputtering power and annealing temperature. The surface topography and microstructure of the nanomultilayers were characterized by X-