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Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE

✍ Scribed by J.J Sánchez; O Marty; M Hopkinson; I Izpura; A Guzmán; J.M.G Tijero


Book ID
108342784
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
723 KB
Volume
192
Category
Article
ISSN
0022-0248

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✍ K Shinohara; Y Shimizu; S Shimomura; Y Okamoto; N Sano; S Hiyamizu 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 92 KB

E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ