Dislocation-limited electron transport i
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T. Sato; T. Suzuki; S. Tomiya; S. Yamada
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Article
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2006
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Elsevier Science
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English
⚖ 190 KB
We investigated dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(0 0 1). It is found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which i