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Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

✍ Scribed by Sang Hoon Shin; Jin Dong Song; Ju Young Lim; Hyun Cheol Koo; Tae Geun Kim

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Structural and electrical properties of high-quality 0.41&#xa0;μm-thick InSb films grown on GaAs (1&#xa0;0&#xa0;0) substrate with InxAl1−xSb continuously graded buffer