Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE

✍ Scribed by M. Tanaka; H. Sakaki

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 573 KB
• Volume: 81
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(87)90383-6