Ultrahigh-vacuum dual-target reactive magnetron sputtering, in a mixed Ar/N 2 discharge was used to deposit epitaxial single-crystal MAX phase Ti 2 AlN(0 0 0 1) thin films, without seed layers, onto Al 2 O 3 (0 0 0 1) substrates kept at 1050 Β°C. By varying the N 2 partial pressure a narrow process w
β¦ LIBER β¦
Structural and mechanical characteristics of (1 0 3) AlN thin films prepared by radio frequency magnetron sputtering
β Scribed by Ping-Feng Yang; Sheng-Rui Jian; Sean Wu; Yi-Shao Lai; Chung-Ting Wang; Rong-Sheng Chen
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 899 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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