𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys

✍ Scribed by N. Chimot; J. Even; H. Folliot; S. Loualiche

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
279 KB
Volume
364
Category
Article
ISSN
0921-4526

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✦ Synopsis

Structural and electronic properties of the BAs compound and B x Ga 1Àx As, B x In 1Àx As alloys are studied using first principles calculations. New results on elastic constants, acoustic phonons and optical phonons frequencies are reported. The 4 Â 4 Kane's interaction matrix is calculated in order to ease simulations of optoelectronic devices. Effective masses and Luttinger parameters for the valence bands are calculated. B x Ga 1Àx As and B x In 1Àx As alloys are simulated using the virtual crystal approximation (VCA). The B x Ga 1Àx As alloy lattice-matched to GaP substrate is found to be an indirect band gap semiconductor. The B x In 1Àx As alloys lattice-matched to InP and GaAs substrates, are found to be direct band gap semiconductors. The B x In 1Àx As alloy is proposed as an alternative solution for epitaxial growth of nanostructures for electronic (field effect transistors) and optoelectronic (lasers, saturable absorbers) devices on InP substrate.

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