In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin-orbit coupling are neglected. Various quantities, such as en
ChemInform Abstract: Structural and Electronic Properties of Zinc Blende BxGa1-xN Nitrides
β Scribed by R. Riane; Z. Boussahl; A. Zaoui; L. Hammerelaine; S. F. Matar
- Publisher
- John Wiley and Sons
- Year
- 2009
- Weight
- 15 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0931-7597
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In order to clarify the electronic and optical properties of wide-energy gap zinc-blende structures ZnSe, MgSe and their alloys (ZnSe) 1-x (MgSe) x , a simple pseudo-potential scheme (EPM) within an effective potential, the virtual crystal approximation (VCA) which incorporates compositional disorde
## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a βFull Textβ option. The original article is trackable v