In order to clarify the electronic and optical properties of wide-energy gap zinc-blende structures ZnSe, MgSe and their alloys (ZnSe) 1-x (MgSe) x , a simple pseudo-potential scheme (EPM) within an effective potential, the virtual crystal approximation (VCA) which incorporates compositional disorde
Calculation of electronic and optical properties of zinc blende GaP1 − xNx
✍ Scribed by F. Benkabou; J.P. Becker; M. Certier; H. Aourag
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 190 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin-orbit coupling are neglected. Various quantities, such as energy levels, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy. Moreover, the crossover of the direct and indirect band gaps is predicted.
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