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Structural and electrical properties of plasma-deposited silicon nitride from SiH4-N2gas mixture

✍ Scribed by Nan-Sheng Zhou; Shizuo Fujita; Akio Sasaki

Book ID
112816262
Publisher
Springer US
Year
1985
Tongue
English
Weight
599 KB
Volume
14
Category
Article
ISSN
0361-5235

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✍ Byungwhan Kim; Sang Hee Kwon πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 592 KB

Improved surface passivation of silicon nitride films requires a high positive charge density. A neural network model of SiN charge density was used to investigate temperature effects on charge density. For a systematic modeling, the deposition process was characterized by means of a face-centered B