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Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates

✍ Scribed by G. B. Galiev; I. S. Vasil’evskii; R. M. Imamov; E. A. Klimov; S. S. Pushkarev; I. A. Subbotin

Book ID: 111438565
Publisher: SP MAIK Nauka/Interperiodica
Year: 2011
Tongue: English
Weight: 202 KB
Volume: 56
Category: Article
ISSN: 1063-7745
DOI: 10.1134/s1063774511050105

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