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Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties

✍ Scribed by I. S. Vasil’evskii; G. B. Galiev; E. A. Klimov; A. L. Kvanin; S. S. Pushkarev; M. A. Pushkin


Book ID
111445038
Publisher
Springer
Year
2011
Tongue
English
Weight
438 KB
Volume
45
Category
Article
ISSN
1063-7826

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