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Structural and doping properties of molecular beam epitaxy-grown Si-doped GaAs(001) surfaces

✍ Scribed by S. Gwo; H. Ohno; S. Miwa; J.-F. Fan; H. Tokumoto


Book ID
116068273
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
736 KB
Volume
357-358
Category
Article
ISSN
0039-6028

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi