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Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

✍ Scribed by R.M. Chu; Y.D. Zheng; Y.G. Zhou; S.L. Gu; B. Shen; R. Zhang; R.L. Jiang; P. Han; Y. Shi

Book ID: 106018646
Publisher: Springer
Year: 2003
Tongue: English
Weight: 576 KB
Volume: 77
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-002-1760-6

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## Abstract The influence of strong magnetic field on the 1/__f__ noise in AlGaN/GaN metal‐oxide‐Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/__f__ noise on the magnetic fields up to 10 T where the strong geometric magneto‐resistance has