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Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots

✍ Scribed by M. Sénès; K.L. Smith; T.M. Smeeton; S.E. Hooper; J. Heffernan

Book ID
104085088
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
163 KB
Volume
40
Category
Article
ISSN
1386-9477

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Self-assembled GaN quantum dots (QDs) grown on Al 0.15 Ga 0.85 N using Si as anti-surfactant were investigated by resonant Raman scattering. Phonons of GaN QDs of different sizes were probed selectively by using laser excitation energies of 3.53 and 5.08 eV. Phonon confinement effects were evidenced