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Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

✍ Scribed by O. Kopylov; R. Shirazi; O. Svensk; S. Suihkonen; S. Sintonen; M. Sopanen; B. E. Kardynał

Book ID: 112182274
Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 242 KB
Volume: 9
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201100391

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