Stress relaxation in Al(Cu) thin films

✍ Scribed by J. Proost; A. Witvrouw; P. Cosemans; Ph. Roussel; K. Maex

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 529 KB
• Volume: 33
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00039-1

✦ Synopsis

Substrate curvature measurements were used to study both the stress changes during thermal cycling and the kinetics of tensile stress relaxation in 800 nm A1 (0.5wt% Cu)-fiims on oxidized Si-substrates. Qualitative microstructural evidence is provided for the observed decrease in room-temperature stress after the first and subsequent thermal cycles. Isothermal relaxation measurements at temperatures up to 100°C could be described well by dislocation glide with an activation energy of 3.0--.0.3 eV and an average athermal flow stress of 600+-200 MPa. Evidence for an Orowan-strengthening mechanism is provided by TEM-investigation.