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Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition

✍ Scribed by H.-J. Schliwinski; M. Pelka; L.-M. Buchmann; W. Windbracke; P. Lange; L. Csepregi

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
373 KB
Volume
11
Category
Article
ISSN
0921-5107

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Preparation of crystalline SiC thin film
Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon
✍ G. Derst; S. Kalbitzer; G. KrΓΆtz; G. MΓΌller πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 260 KB

Thin crystalline films of SiC have been produced by ion beam modification of heteroepitaxial silicon thin films on sapphire and by plasma-enhanced chemical vapour deposition on crystalline silicon and sapphire substrates. Both methods yield highly transparent crystalline material. The preparation pr