Stress in dielectric films
โ Scribed by R. Carpenter
- Book ID
- 103453903
- Publisher
- Elsevier Science
- Year
- 1965
- Tongue
- English
- Weight
- 110 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The conduction mechanism and the behavior of stress-induced leakage current (SILC) through the HfO 2 high-k layers in metal-oxide-semiconductor (MOS) structures have been investigated. Assisted tunneling of electrons via stress-induced interface traps and bulk oxide traps are responsible for the SIL
THE object of this paper is to discuss dielectric stresses from what may be called the mechanical as distinguished from the atomistic or electronic point of view. The discussion is based on two ideas, namely (a) That dielectric break-down occurs at a definite eiectric field intensity, and (b) That t