Si 1Γx Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 β’ 10 15 cm Γ2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha
β¦ LIBER β¦
Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates
β Scribed by T.S. Perova; K. Lyutovich; E. Kasper; A. Waldron; M. Oehme; R.A. Moore
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 208 KB
- Volume
- 135
- Category
- Article
- ISSN
- 0921-5107
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