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Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

✍ Scribed by Zhao, D. G.; Xu, S. J.; Xie, M. H.; Tong, S. Y.; Yang, Hui


Book ID
118067488
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
359 KB
Volume
83
Category
Article
ISSN
0003-6951

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## Abstract We report on the optical properties of a series of non‐polar __a__‐plane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking