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Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

✍ Scribed by Ahmed M. El-Naggar

Book ID
113070073
Publisher
Springer US
Year
2011
Tongue
English
Weight
368 KB
Volume
23
Category
Article
ISSN
0957-4522

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## Abstract Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by X‐ray diffraction analysis shows that indium doping i