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Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

โœ Scribed by Basanta Roul; Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Mahesh Kumar; A.T. Kalghatgi; S.B. Krupanidhi


Book ID
116630360
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
811 KB
Volume
354
Category
Article
ISSN
0022-0248

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Influence of substrate and film thicknes
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## Abstract Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of