Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy
✍ Scribed by M. A. Lourenço; D. J. Gardiner; M. Bowden; J. Hedley; D. Wood
- Book ID
- 110240661
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 33 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0261-8028
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📜 SIMILAR VOLUMES
## Abstract A polarized Raman method is described to measure the tensor elements of the residual stress state (induced upon fabrication) in a thin silicon plate, a suspended structure belonging to the test element group (TEG) chip of a microelectromechanical system (MEMS). The residual stress data
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