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Determination of Stress in Porous Silicon by Micro-Raman Spectroscopy

✍ Scribed by Manotas, S. ;Agull�-Rueda, F. ;Moreno, J.D. ;Ben-Hander, F. ;Guerrero-Lemus, R. ;Mart�nez-Duart, J.M.

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
83 KB
Volume
182
Category
Article
ISSN
0031-8965

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The Raman spectra of silicon nanocrystals embedded in silicon oxide and in porous silicon were measured at various laser powers. It was found that the Si-Si stretching Raman peak shifts to lower wavenumbers and broadens when the laser power increases. The effect is significant and reversible, i.e. t