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Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy

โœ Scribed by R. Srnanek; G. Irmer; D. Donoval; A. Vincze; B. Sciana; D. Radziewicz; M. Tlaczala


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
696 KB
Volume
39
Category
Article
ISSN
0026-2692

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Study of photoexcited plasma in p-doped
โœ R. Srnanek; G. Irmer; D. Donoval; I. Novotny; B. Sciana; D. Radziewicz; M. Tlacz ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 1005 KB

The generation and properties of photoexcited steady-state plasma of electrons and holes in bevel-shaped p-type GaAs structures were studied by micro-Raman spectroscopy. The best correspondence of theoretical calculations with experimental spectra was obtained by using of photoexcited carrier concen