Strained-layer quantum well heterostructure lasers
โ Scribed by J.J. Coleman
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 325 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0040-6090
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## Abstract The operation in the 1020 nm wavelength range of strainedโlayer InGaAs/GaAs separateโconfinementโheterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร thick InGaAs quantum well with an indium content of 25%, which is close to cri
with respect to the argument; S,, is the effective loss tangent [S] and k,, satisfies Ji(k,,b) = 0. The conductor loss P , , the dielectric loss Pd, the stored electric energy We, and the stored magnetic energy W, are, respectively, expressed as 14 12 10' where cc is the conductivity of the patch a
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