On the modulation bandwidth in strained quantum-well lasers
โ Scribed by Pawel Rusek; Marek S. Wartak
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 291 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
โฆ Synopsis
with respect to the argument; S,, is the effective loss tangent [S] and k,, satisfies Ji(k,,b) = 0. The conductor loss P , , the dielectric loss Pd, the stored electric energy We, and the stored magnetic energy W, are, respectively, expressed as 14 12 10'
where cc is the conductivity of the patch and tan S is the loss tangent of the substrate.
,
๐ SIMILAR VOLUMES
In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol
We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.