✦ LIBER ✦

Strain relaxation mechanism for hydrogen-implanted Si[sub 1âx]Ge[sub x]/Si(100) heterostructures

✍ Scribed by Trinkaus, H.; HollaÌnder, B.; Rongen, St.; Mantl, S.; Herzog, H.-J.; Kuchenbecker, J.; Hackbarth, T.

Book ID: 120358981
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 448 KB
Volume: 76
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.126704

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray photoelectron spectroscopic evalua

X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si[sub 1âx]Ge[sub x], Si[sub 1ây]C[sub y], and Si[sub 1âxây]Ge[sub x]C[sub y] on Si(001)

✍ Kim, Myeongcheol; Osten, H. J. 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 296 KB

Type-I GeâGe[sub 1âxây]Si[sub x]Sn

Type-I GeâGe[sub 1âxây]Si[sub x]Sn[sub y] strained-layer heterostructures with a direct Ge bandgap

✍ MeneÌndez, J.; Kouvetakis, J. 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 388 KB

Strain relaxation and surface morphology

Strain relaxation and surface morphology of compositionally graded Si/Si[sub 1−x]Ge[sub x] buffers

✍ Li, J. H. 📂 Article 📅 1998 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 556 KB

Stark effect modeling in strained n-type

Stark effect modeling in strained n-type Si/Si[sub 1−x]Ge[sub x] resonant tunneling heterostructures

✍ Zid, F. Ben; Bhouri, A.; Mejri, H.; Tlili, R.; Said, M.; Lazzari, J.-L.; d’Avita 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 343 KB

Si/Si[sub 1âx]Ge[sub x] heterostructur

Si/Si[sub 1âx]Ge[sub x] heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation

✍ Dollfus, Philippe 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 445 KB

Diminished photoluminescence polarizatio

Diminished photoluminescence polarization due to exciton ionization in strained Si[sub 1âx]Ge[sub x]/Si(001) quantum wells

✍ Miyazaki, T.; Fukatsu, S. 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 334 KB

Strain relaxation mechanism for hydrogen-implanted Si[sub 1âx]Ge[sub x]/Si(100) heterostructures

Strain relaxation mechanism for hydrogen-implanted Si[sub 1âx]Ge[sub x]/Si(100) heterostructures