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Stark effect modeling in strained n-type Si/Si[sub 1−x]Ge[sub x] resonant tunneling heterostructures

✍ Scribed by Zid, F. Ben; Bhouri, A.; Mejri, H.; Tlili, R.; Said, M.; Lazzari, J.-L.; d’Avitaya, F. Arnaud; Derrien, J.

No coin nor oath required. For personal study only.

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