Structural characterization of InGaAs/In
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A. VilΓ ; A. Cornet; J.R. Morante; A. Georgakilas; G. Halkias; N. BΓ©lcourt
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Article
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1997
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Elsevier Science
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English
β 238 KB
Reccnt studies on HEMT structures according to their growth orientation have attracted much interest from the viewpoint of physics and novel device applications. However, the optimization of their properties needs a high degree of crystalline quality. In this work, the structural characteristics of