Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope approximation, the transfer matrix method is used, with adaptation to multi-band models. A comparison is made for two structures with fundamenta
β¦ LIBER β¦
Orientation Dependence of Interface Inversion Asymmetry Effect on InGaAs/InP Quantum Wells
β Scribed by Chun-Nan Chen; Yeong-Her Wang; Mau-Phon Houng; Jih-Chen Chiang
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 167 KB
- Volume
- 231
- Category
- Article
- ISSN
- 0370-1972
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