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Strain in Nanoscale Germanium Hut Clusters on Si(001) Studied by X-Ray Diffraction

โœ Scribed by Steinfort, A. J.; Scholte, P. M. L. O.; Ettema, A.; Tuinstra, F.; Nielsen, M.; Landemark, E.; Smilgies, D.-M.; Feidenhans'l, R.; Falkenberg, G.; Seehofer, L.; Johnson, R. L.


Book ID
120992824
Publisher
The American Physical Society
Year
1996
Tongue
English
Weight
110 KB
Volume
77
Category
Article
ISSN
0031-9007

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Strain and relaxation in Si-MBE structur
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High resolution X-ray diffraction measurements have been done on Si(001)-based structures grown by molecular beam epitaxy (MBE). By systematically varying the angle of incidence and the diffraction angle, the diffraction intensity data can be displayed in a two-dimensional X-ray diffraction intensit