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Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy

✍ Scribed by M. Stoehr; M. Maurin; F. Hamdani; J.P. Lascaray; D. Barbusse; B. Fraisse; R. Fourcade; P. Abraham; Y. Monteil


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
369 KB
Volume
21
Category
Article
ISSN
0921-5107

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