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Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

✍ Scribed by Le Ru, E. C.; Howe, P.; Jones, T. S.; Murray, R.

Book ID
119994061
Publisher
The American Physical Society
Year
2003
Tongue
English
Weight
130 KB
Volume
67
Category
Article
ISSN
1098-0121

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Long-wavelength emission from single InA
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✍ L. Beji; L. BouzaΓ―ene; B. IsmaΓ―l; L. Sfaxi; H. Maaref; H. Ben Ouada πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 182 KB

In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA