Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure
β Scribed by Ma, B. S.; Wang, X. D.; Su, F. H.; Fang, Z. L.; Ding, K.; Niu, Z. C.; Li, G. H.
- Book ID
- 118158781
- Publisher
- American Institute of Physics
- Year
- 2004
- Tongue
- English
- Weight
- 349 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0021-8979
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π SIMILAR VOLUMES
The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0:
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum