The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0:
β¦ LIBER β¦
Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots
β Scribed by Kita, Takashi; Wada, Osamu; Ebe, Hiroji; Nakata, Yoshiaki; Sugawara, Mitsuru
- Book ID
- 111950921
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2002
- Tongue
- English
- Weight
- 85 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0021-4922
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We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum