## Abstract Longβrange strain in nearly perfect crystalline materials can be detected by Xβray dynamical diffraction. Longβrange strain due to uniform bending or torsion is undetectable by the conventional method, but can be detected by rotating the specimens along the scattering vector. This metho
β¦ LIBER β¦
Strain analysis in Si micro-electromechanical systems by dynamical X-ray diffraction
β Scribed by Saka, Takashi
- Book ID
- 114497444
- Publisher
- International Union of Crystallography
- Year
- 2012
- Tongue
- English
- Weight
- 524 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0021-8898
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Observation of strain concentration in S
β
Saka, Takashi
π
Article
π
2011
π
John Wiley and Sons
π
English
β 342 KB
Strain analysis of InP/InGaAsP wafer bon
β
Hong-Quan Zhao; Li-Juan Yu; Yong-Zhen Huang; Yu-Tian Wang
π
Article
π
2006
π
Elsevier Science
π
English
β 192 KB
Techniques for mechanical strain analysi
β
I De Wolf; V Senez; R Balboni; A Armigliato; S Frabboni; A Cedola; S Lagomarsino
π
Article
π
2003
π
Elsevier Science
π
English
β 782 KB
In this paper, three techniques are discussed that provide information on process-induced local mechanical stress in silicon: the convergent beam electron diffraction technique of transmission electron microscopy, X-ray micro-diffraction and micro-Raman spectroscopy. We discuss the principles of the
Strain and defect densities in Si/Si1-xG
β
B. HollΓ€nder; S. Mantl; B. Stritzker; F. SchΓ€ffler; H.-J. Herzog; E. Kasper
π
Article
π
1991
π
Elsevier Science
π
English
β 459 KB
Quantitative phase analysis by X-ray dif
β
V. Ramnath; N. Jayaraman
π
Article
π
1987
π
Springer
π
English
β 301 KB
Determination of strontium segregation i
β
K. Nogita; H. Yasuda; K. Yoshida; K. Uesugi; A. Takeuchi; Y. Suzuki; A.K. Dahle
π
Article
π
2006
π
Elsevier Science
π
English
β 402 KB