𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Observation of strain concentration in Si micro system technology by X-ray dynamical diffraction

✍ Scribed by Saka, Takashi

Book ID
105366651
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
342 KB
Volume
208
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Long‐range strain in nearly perfect crystalline materials can be detected by X‐ray dynamical diffraction. Long‐range strain due to uniform bending or torsion is undetectable by the conventional method, but can be detected by rotating the specimens along the scattering vector. This method was applied to Si micro systems, and local strain concentrations were clearly revealed by X‐ray topography.

πŸ“œ SIMILAR VOLUMES

Direct observation of strain in bulk sub
Direct observation of strain in bulk subgrains and dislocation walls by high angular resolution three-dimensional X-ray diffraction
✍ B. Jakobsen; U. Lienert; J. Almer; H.F. Poulsen; W. Pantleon πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 295 KB

The X-ray diffraction (XRD) method "high angular resolution 3DXRD" is briefly introduced, and results are presented for a single bulk grain in a polycrystalline copper sample deformed in tension. It is found that the three-dimensional reciprocal-space intensity distribution of a 400 reflection assoc

Investigation by High Resolution X-ray D
Investigation by High Resolution X-ray Diffraction of the local strains induced in Si by periodic arrays of oxide filled trenches
✍ Eberlein, M. ;Escoubas, S. ;Gailhanou, M. ;Thomas, O. ;Micha, J.-S. ;Rohr, P. ;C πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 334 KB

## Abstract High Resolution X‐ray Diffraction allows for the measurement of periodic strain fields in monocrystalline silicon and is non‐destructive. In this study a periodic strain field is induced in Si by SiO~2~ filled trenches (Shallow Trench Isolation process). The strain in Si is evaluated fo